| 摘要 |
PROBLEM TO BE SOLVED: To prevent fusing by increasing heat capacity of a protecting resistance layer provided in an input/output protection circuit. SOLUTION: This semiconductor device is provided with an internal circuit and a protection circuit for protecting the internal circuit from external abnormality voltage such as static electricity, etc. A memory cell having a capacitor containing a storage node electrode 7 is formed in the internal circuit. A protecting resistance layer 9 connected to a terminal used for input or output of signal is formed in the protection circuit. And the thickness t1 of the storage node electrode 7 is equal to the thickness t3 of the protecting resistance layer 9. |
