发明名称 Plasma CVD apparatus for forming a thin film of uniform thickness
摘要 The window of a holding electrode is a rectangular opening and an insulating plate is securely fitted in this window. The insulating plate has a rectangular flange shape having a rectangular opening. A glass substrate is securely fitted in the opening of the insulating plate. While the insulating plate may be a low-cost glass plate or quartz plate, the glass plate made of the same material as the glass substrate is used. A predetermined raw gas is supplied into a reaction chamber to set the pressure therein to a predetermined level, and high-frequency power is applied between the glass substrate and the electrode. Because the peripheral portion of the glass substrate is surrounded by the insulating plate, it is possible to avoid the influence of the disturbance of the electric field which would otherwise occur at the interface between the substrate surface and the surface of the holding electrode due to the surface of the glass substrate being charged up when growing a film. This allows a film with a uniform thickness to be grown on the glass substrate.
申请公布号 US5609691(A) 申请公布日期 1997.03.11
申请号 US19950563113 申请日期 1995.11.27
申请人 NEC CORPORATION 发明人 YAMAMORI, SHUKI
分类号 H01L21/205;C23C16/458;C23C16/509;H01L21/31;(IPC1-7):C23C16/00 主分类号 H01L21/205
代理机构 代理人
主权项
地址
您可能感兴趣的专利