| 摘要 |
PROBLEM TO BE SOLVED: To form a film only on the desired region of the surface of a silicon substrate without exposing the substrate to high temperature by an electron beam conducting by reducing the beam diameter to a specific range or moving the substrate, emitting it to a silicon oxide film manufacturing site, and forming the silicon oxide film. SOLUTION: Silicon material gas 11 and oxygen-containing gas 13 are introduced into a vacuum vessel 5, and a silicon oxide film 2 is manufactured at the predetermined site of a silicon substrate 1. In this case, scanning with an electron beam 4 in which the beam diameter is reduced to a range of 10Åto 1mm is conducted or the substrate is moved, the beam is emitted to a silicon oxide film manufacturing site to form a silicon oxide film 2. For example, the substrate 1 is installed on a moving stage 10 in the vessel 5, evacuated in high vacuum, and then the back surface of the substrate 1 is heated by a heater 3 as required. Then, silane gas 11 is introduced from a nozzle 12, oxygen- containing gas 13 is introduced from a nozzle 14, the beam 4 is scanned by a deflecting electrode 7, and emitted to the predetermined region of the substrate 1.
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