| 摘要 |
PROBLEM TO BE SOLVED: To obtain a ferromagnetic material thin film having uniform composition, which was hitherto impossible to obtain by Pb or Bi, and high crystabllizability. SOLUTION: A vapor deposition device 1 has a vacuum vessel 1a, and a holder 3, which retains a single-crystal substrate 2, is arranged in the vacuum vessel 1a. The holder 3 is arranged in the vacuum vessel 1a. The holder 3 is connected to a motor 5 through a rotating shaft 4, and a heater 6, with which the single-crystal substrate 2 is heated up, is built-in the holder 3. An oxidizing gas feeding device 7 is provided in the vapor deposition device 1, and an oxidizing gas feeding hole 8 is arranged directly under the holder 3. First, a single-crystal Si substrate 2, having a cleaned surface, is arranged in the vacuum vessel, and an Si oxide layer is formed on the surface of the Si single-crystal substrate by heating while oxidizing gas is being introduced. Subsequently, Mn metal, Y-metal and gas are fed to the surface, and a YMnO2 crystal layer is formed on the surface of the Si surface crystal. |
