发明名称 Semiconductor device
摘要 In a semiconductor device wherein an active device circuit and electrically conductive lines, such as a power source line for supplying power to the semiconductor active device circuit or signal lines for inputting a signal to the semiconductor active device circuit, are formed together on a single substrate, an improved arrangement wherein a conventional power source or signal line is formed by using a plurally of individual lines of substantially uniform electrical resistance where the electrical resistance of each line is limited to a predetermined value. Moreover, a waveform deterioration response signal component is added to a signal transmitted through the signal lines so as to improve the transmitted signal by compensating for waveform deterioration experienced during circuit operation. In addition, an electrical capacity forming electrode is provided alongside substantial length of the power source line. A capacitor is thus effectively formed within the active device circuit by intervening a dielectric between the power source line and the capacity forming electrode so as to reduce high-frequency noise which occurs in the power source line. The disclosed arrangements substantially reduce the occurrence of an irregular operation in the active device circuit.
申请公布号 US5610414(A) 申请公布日期 1997.03.11
申请号 US19940275676 申请日期 1994.07.15
申请人 SHARP KABUSHIKI KAISHA 发明人 YONEDA, HIROSHI;YOSHIDA, SHIGETO;KATOH, KENICHI;YAMANE, YASUKUNI;ISHII, YUTAKA
分类号 G02F1/13;G02F1/1362;G09G3/36;H01L23/528;(IPC1-7):H01L29/04;H01L33/00;H01L27/10 主分类号 G02F1/13
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