Mask prodn. on semiconductor substrate

摘要

The prodn. of a mask on a semiconductor substrate (5) comprises applying a masking layer (4), applying a force on the layer surface by means of a contact tip (3) and moving the tip (3) over the layer surface while maintaining the force. A fluid (2) is supplied which locally removes the masking layer under the effect of the force and motion of the tip (3). Pref. the fluid (2) is a developing liq., comprising a mixt. of methyl isobutylketone and isopropanol, and the masking layer is an unexposed photoresist lacquer or electron beam resist lacquer consisting of polymethyl methacrylate.