发明名称 |
Method for forming a pattern of non-volatile ferroelectric thin film memory |
摘要 |
A pattern of a non-volatile high-performance ferroelectric thin film memory is formed by applying a composition containing hydrolytic metal compounds, and a photosensitizer which generates water when irradiated with active rays onto a substrate. The resultant film is exposed to active rays in compliance with a prescribed pattern to form an image and developed with a solvent to remove non-exposed portions, and then the remaining exposed portions are subjected to a heat treatment to convert the exposed portions into a dielectric substance comprising a metal oxide as expressed by the following formula (I): (Bi2O2)2+(Am-1BmO3m+1)2-(I)where A is one or more elements selected from the group consisting of Ba, Sr, Pb and Bi; B is one or more elements selected from the group consisting of Ti, Nb and Ta; and m is an integer of from 2 to 5.
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申请公布号 |
US5605723(A) |
申请公布日期 |
1997.02.25 |
申请号 |
US19950434312 |
申请日期 |
1995.05.02 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
OGI, KATSUMI;ATSUKI, TSUTOMU;UCHIDA, HIROTO;YONEZAWA, TADASHI;SOYAMA, NOBUYUKI |
分类号 |
H01L27/10;G03F7/004;H01L27/115;(IPC1-7):B05D3/06;B05D3/02;H05H1/00;C23C18/00 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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