| 摘要 |
PROBLEM TO BE SOLVED: To improve the detection rate of faulty places of a semiconductor device, and to locate the defective place in a short period of time. SOLUTION: A mark, to be left on a defective place, is put on by degenerating the reacting material formed on a semiconductor board by the energy coming from the defective place generated by the application of voltage to a semiconductor device. A polysilicon wiring 15, which is covered by an interlayer insulating film 14 through an insulating film, is formed on a semiconductor board 1. Negative resist is applied to the above-mentioned interlayer insulating film 14. Voltage is applied to the semiconductor board 1 in the above-mentioned state. The concentration of an electric field is generated when there is a faulty connection between the wiring and the semiconductor board, and a light 9 is emitted. The photoresist 10 reacts this light-emitting phenominon 9, and the photoresist 10 is exposed to light. When the photoresist 10 which is partially exposed to light, is developed and the part which is not exposed to light is removed, a photoresist mark 16, which is exposed to light and shows the diffective place, can be formed. |
