| 摘要 |
A cap wafer (10) is used to package semiconductor devices on a device wafer (30). Successive etching processes form a plurality of partially etched cavities (27) extending from a front surface (11) of the cap wafer (10) into the cap wafer (10). The pattern of the partially etched cavities (27) is determined in accordance with the pattern of dies (32) on the device wafer (30). The cap wafer (10) is aligned with the device wafer (30) and bonded to the device wafer (30) using a glass frit as a bonding agent. After being bonded to the device wafer (30), the cap wafer (10) is thinned from the back surface (12) until the back surface (12) of the cap wafer (10) reaches the partially etched cavities (27). The device wafer (30) is then diced into distinct dies.
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