发明名称 Method for producing nonvolatile memory used as read-only storage media
摘要 A nonvolatile memory producing apparatus has a data computing section 31, an electron patterning section 33 for patterning a wafer 3 by using an electron beam, a control section 32 for controlling +the electron patterning section 33 on the basis of the result from the data computing section 31. The data computing section 31 prepares binary codes for individual IC chips formed on the wafer 3, and generates coordinate regarding the wafer 3 and the IC chips. The data computing section 31 computes direct draw data for each IC chip based on the binary codes, and generates direct pattern data based on the binary codes and the direct draw data. The control section 32 and the electron-beam patterning section 33 cooperate to perform direct electron-beam patterning on the IC chips in accordance with the pattern data.
申请公布号 US5604143(A) 申请公布日期 1997.02.18
申请号 US19950552112 申请日期 1995.11.02
申请人 TOYOTA JIDOSHA KABUSHIKI KAISHA 发明人 ISHIDA, SHOJI;NAKANO, KENJI;KASHIWAYA, MOTOFUMI;INOUE, MASATAKA
分类号 H01L21/027;G11C17/12;G11C17/14;H01J37/317;H01L21/8246;H01L27/112;(IPC1-7):H01L21/824 主分类号 H01L21/027
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