发明名称 METHOD OF GRINDING SEMICONDUCTOR SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To provide an improved method for manufacturing a substrate with superior flatness. SOLUTION: An improved method for polishing a semiconductor substrate includes a stage for forming a surface to be protected by forming a protection layer 21 on the main surface 24 of a substrate 19 and a stage for polishing a non-protected surface 26 of the substrate 19 by a double-sided polishing deice. During the polishing process, the material of the non-protected surface 26 is eliminated at a faster speed than that of the material on the protected surface. This method provides the substrate 19 where one surface with improved flatness characteristics is polished. In another embodiment, polishing pads 13 and 23 with different surface contact characteristics are used to automate the process.</p>
申请公布号 JPH0945644(A) 申请公布日期 1997.02.14
申请号 JP19960186875 申请日期 1996.06.28
申请人 MOTOROLA INC 发明人 FUERUNANDO EE BERO;JIEEMUSU BII HOORU;OTSUTOO RUUDEYUKU;IEERU DABURIYU ONIIRU
分类号 H01L21/304;B24B37/08;B24B37/10;(IPC1-7):H01L21/304 主分类号 H01L21/304
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