SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To prevent such a foreign matter like moisture from reaching the inside of a chip through a crack generated in the interface between a BPSG film and another insulation film, in a device with a flat interlayer insulation film formed using the BPSG film containing high-concentration boron. SOLUTION: Outside a guard ring GR formed along the outer peripheral portion of the principal surface of a semiconductor chip 1, a slit (S) is formed whose bottom portion reaches at least a deeper place than the interface between an interlayer insulation film 23 and a BPSG film 20 of the lower layer thereof. By the slit S, a crack generated in the interface between the BPSG film 20 containing high-concentration boron and the interlayer insulation film 23 is prevented from proceeding into the inside of the chip 1 along this interface.