| 摘要 |
<p>PROBLEM TO BE SOLVED: To perform monolithic arrangement formation of a reflection type surface light-emitting laser and a semiconductor photodetector for monitoring while maintaining a fitting index of an element from a wafer. SOLUTION: In an optical device having a semiconductor photodetector for monitoring and a reflection type surface light-emitting laser, the semiconductor photodetector PD for monitoring and the reflection type surface light- emitting laser LR are formed adjoining each other and at least one side of the semiconductor photodetector for monitoring PD and the reflection type surface light-emitting laser LR is made L-shaped on the surface of the semiconductor substrate 1 so as to make a photoreceiving face 2 of the semiconductor photodetector PD for monitoring to oppose to one side resonator end face of the reflection type surface light-emitting laser LR.</p> |
