| 摘要 |
<p>An insulated gate bipolar transistor having a low on-voltage and a low turn-off time is provided. P-type anode layer (11) having a low impurity concentration, preferably 1 x 10<1><6> to 1 x 10<1> 7/cm<3>, is provided on an N-type drain layer (12) that includes a pair of P-type base regions (13) having an N<+>-type source regions (14). A plurality of P<+>-type anode regions (21) are formed in the P-type anode layer (11). <IMAGE></p> |
