| 摘要 |
PURPOSE:To form a transistor of high performance which can be split into a plural pieces by a method wherein the third semiconductor region is formed at the position opposed to those of a plurality of the first semiconductor regions on the opposite side to an insulation plate in connection with the second semiconductor region and by isolation from the first semiconductor region. CONSTITUTION:The first semiconductor regions 153-1, 153-2, 153-3 in contact with an insulation substrate 151 act as the collector, which regions are split into a plurality. If the emitter is common without being split, multi-collector that a plurality of collectors are led out to the common emitter and the common base can be formed. Besides, a high quality composite transistor having the multi- emitters and multi-collectors at the same time can be formed by three-split of the emitter formed of the third semiconductor region into [155-1a-155-3a], [155- 1b-155-3b], and [155-1c-155-3c]. |
