| 摘要 |
A method of masking semiconductor substrates during fabrication of semiconductor devices includes positioning an oxide mask (15) on the substrate (10) so as to define a growth area (16) and an unmasked portion (17) of the surface (11). A dense oxide layer (20) is grown on the unmasked portion (17) and the oxide mask (15) is removed to expose the growth area (16). The substrate (10) is introduced into a growth chamber and heated to approximately 580 DEG C - 600 DEG C to desorb any native oxide (12) in the exposed growth area (16). Crystalline material (25) is selectively grown on the exposed growth area (16) and the substrate (10) is heated to approximately 640 DEG C under high arsenic flux to desorb the dense oxide layer (20), without removing the substrate (10) from the chamber. <IMAGE> |
