发明名称 |
Nonvolatile semiconductor memory device with a row redundancy circuit |
摘要 |
A collective erasure type nonvolatile semiconductor memory device which allows use of redundant structure to word lines is provided. A row address buffer having address converting function simultaneously selects a plurality of physically adjacent word lines from a memory array in programming before erasure. Programming before erasure is effected on the memory cells on the simultaneously selected word lines. Even when physically adjacent word lines are short-circuited between each other, programming high voltage can be transmitted to the defective word lines, as these word lines are selected simultaneously. Therefore, the memory cells on the defective word lines can be programmed before erasure, so that over erasure at the time of collective erasing operation can be prevented. Thus, redundant structure for replacing defecting word lines by spare word lines can be utilized.
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申请公布号 |
US5602778(A) |
申请公布日期 |
1997.02.11 |
申请号 |
US19950468393 |
申请日期 |
1995.06.06 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUTATSUYA, TOMOSHI;MIHARA, MASAAKI;TERADA, YASUSHI;NAKAYAMA, TAKESHI;MIYAWAKI, YOSHIKAZU;KOBAYASHI, SHINICHI;OHKAWA, MINORU |
分类号 |
G11C17/00;G11C16/02;G11C16/06;G11C16/08;G11C29/00;G11C29/04;(IPC1-7):G11C11/34 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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