| 摘要 |
PROBLEM TO BE SOLVED: To form a light emitting element principally comprising silicon by providing a porous silicon containing erbium as the center of emission, and a silicon oxide deposited thereon. SOLUTION: Erbium is introduced into a silicon substrate by ion implantation and the silicon substrate is subjected to annealing. The silicon substrate is then coated, on the rear side thereof, with aluminum and subjected to alloying. Subsequently, the silicon substrate is subjected to anodic formation in order to make porous the surface thereof and held in a mixed gas of nitrogen and steam for 30min at 900 deg.C thus depositing thermal oxide on the surface thereof. At the time of depositing silicon oxide, oxygen enters into the porous silicon and forms the center of emission together with erbium thus emitting a light. According to the method, a light emitting element principally comprising silicon can be obtained. |
