FABRICATION OF EDGE EMISSION LED

摘要

PROBLEM TO BE SOLVED: To form a large and uniform P type layer by eliminating the positional shift between the P type layer composing a light emitting part and the emission edge thereof. SOLUTION: Impurities are diffused selectively to the surface of an underlying semiconductor 11 using an anti-diffusion layer 13 as a mask thus forming a P type layer 12. The underlying semiconductor 11 is then etched using the anti-diffusion layer 13 and the like as a mask to make a recess 16 and the emission edge 16a of light emitting part is formed on the side face of the recess 16.