| 摘要 |
PROBLEM TO BE SOLVED: To solve the dispersion of electric characteristics and the disconnection of metal wiring which are caused by unevenness of the surface of a capacitor insulating film, and obtain a semiconductor device excellent in reliability at a high yield. SOLUTION: On the upper surface of an interlayer insulating film 1 covering the surface of a supporting substrate on which a semiconductor integrated circuit is formed, the following are formed in order; a lower electrode 2 for a capacitance element, a first dielectric film 7, a second dielectric film 8 thicker than the step-difference of unevenness of the first dielectric film 7, and a thin film 9 having an etching rate equivalent to the second dielectric film 8. By dry-etching, the thin film 9 and a part of the second dielectric film 8 are etched back, and a capacitor insulating film 10 is formed, on which an upper electrode 4 for a capacitance element is formed. The upper electrode 4 for a capacitance element and the capacitor insulating film 10 are selectively etched. The lower electrode 2 for a capacitance element is selectively etched and a capacitance element is formed. A protective insulating film 5 for the capacitance element is formed, an aperture is made, and a metal wiring 6 is formed. |
