| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor memory, e.g. a DRAM, having a booster circuit for power supply voltage or the like in which power consumption is reduced by reducing current consumption of the booster circuit. SOLUTION: The semiconductor memory comprises a booster circuit 17 for generating a boosted voltage SVCCL=VCC/2+VTH+αbeing fed to a BRS generation circuit 14, and a booster circuit 18 for generating a boosted voltage SVCCH=VCC+VTH+αbeing fed to a row decoder 13 and a BLT generation circuit 15.
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