| 摘要 |
<p>PROBLEM TO BE SOLVED: To make it possible to lessen the number of processes of mounting a semiconductor device and to make it possible to prevent the bonding force of an anisotropic conductive bonding agent from being reduced. SOLUTION: An anisotropic conductive bonding agent layer 18 is formed on the upper surface of a wafer 11 with a plurality of bump electrodes 12 formed on the upper surface in such a way as to cover the electrodes 12 by a spin coating, then, the wafer 11 is diced along dicing streets 13 to split into individual chips, whereby semiconductor devices, which are respectively provided with the layer 18, are obtained. As a result, in the case where a semiconductor device is mounted on a substrate, the semiconductor device provided with the layer 18 has only to be placed on the substrate and the exclusive process for arranging the layer 18 on the substrate can be omitted. Moreover, the air can be prevented from being left between the layer 18, which is formed by the spin coating, and the wafer 11. Accordingly, the bonding force of the anisotropic conductive bonding agent can be prevented from being reduced.</p> |
