发明名称 FILM FORMATION DEVICE AND SUBSTRATE SUPPORTING JIG FOR USE IN THIS DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a film formation device capable of accurately suppressing production of particles when performing film formation process, and a substrate supporting jig for use in this device. SOLUTION: A specific reaction gas is introduced into a vertical furnace, and film formation process is performed by phase reaction with respect to a substrate W supported by a substrate supporting jig. A plurality of pillars 11 are provided vertically so as to correspond to a circumferential portion of the substrate W, and also a placing part 12 for placing the substrate W on each pillar 11 is provided, and a fine projection 15 is appropriately formed on a placing face 14 of each of the placing parts 12. The placing part 12 is composed of a recess groove 13 formed in a direction normal to the pillar 11. The substrate W is supported under condition of point contact by the fine projection 15 in the placing part 12 of the pillar 11. Connection quantity of a deposit film 16 in a contact portion can remarkably be reduced to suppress a generation of particles.</p>
申请公布号 JPH0936209(A) 申请公布日期 1997.02.07
申请号 JP19950201484 申请日期 1995.07.14
申请人 NIPPON STEEL CORP 发明人 OKAYAMA SATOSHI
分类号 B65D85/86;H01L21/205;H01L21/673;H01L21/68;H01L21/683;(IPC1-7):H01L21/68 主分类号 B65D85/86
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