发明名称 |
METHOD AND APPARATUS FOR MONOLITHIC OPTOELECTRONIC INTEGRATED CIRCUIT USING SELECTIVE EPITAXY |
摘要 |
A monolithic Optoelectronic Integrated Circuit including a photodiode (4) and a CMOS readout circuit (6) is described in which the diode is formed by compositionally graded InGaAs (28) selectively epitaxially grown between a substrate of Si (16) and an absorption layer of InGaAs (22), the areas of said layers being less than 500 square micron and wherein a readout circuit (6') on said substrate is coupled to said diode.
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申请公布号 |
WO9704493(A1) |
申请公布日期 |
1997.02.06 |
申请号 |
WO1996US10916 |
申请日期 |
1996.06.26 |
申请人 |
DISCOVERY SEMICONDUCTORS, INC. |
发明人 |
JOSHI, ABHAY, M. |
分类号 |
H01L27/14;H01L21/20;H01L21/205;H01L27/144;H01L31/10;(IPC1-7):H01L33/00;H01L29/861;H01L29/88 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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