SEMICONDUCTOR MANUFACTURING DEVICE AND MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and semiconductor integrated circuit device manufacturing method with which a semiconductor integrated circuit device of excellent electric characteristics can be manufactured easily. SOLUTION: A silicon oxide film forming chamber 5, in which a silicon oxide film is formed on the semiconductor region surface where the surface of a wafer 2 is exposed, is provided between a CVD chamber 6, which is a treatment chamber to treat the wafer 2, and a load lock chamber 4 where the wafer 2 is carried in and out to and from the CVD chamber in the semiconductor manufacturing device.