| 摘要 |
<p>A monolithic Optoelectronic Integrated Circuit including a photodiode (4) and a CMOS readout circuit (6) is described in which the diode is formed by compositionally graded InGaAs (28) selectively epitaxially grown between a substrate of Si (16) and an absorption layer of InGaAs (22), the areas of said layers being less than 500 square micron and wherein a readout circuit (6') on said substrate is coupled to said diode.</p> |
