发明名称 |
Driving circuit, MOS transistor using the same and corresponding applications |
摘要 |
A first principle on which the driver circuit of this invention operates is to delay the turning on of the MOS transistor (M2) by utilizing the time-wise pattern of the circuit input (G) signal rather than generating a delay within the circuit itself. The basic idea is one of using a threshold type of circuit element and arranging for no current to flow toward or from, depending on the type of the MOS transistor, the control terminal before the voltage at the circuit input exceeds a predetermined value. This is achieved, for example, by coupling a Zener diode (D1) serially to the control terminal. Where the input signal is of a kind which increases with a degree of uniformity, the time required to exceed that threshold will correspond to the desired delay. Thus, the driver circuit can match the dynamic range of the input signal automatically. <IMAGE>
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申请公布号 |
EP0757512(A1) |
申请公布日期 |
1997.02.05 |
申请号 |
EP19950830341 |
申请日期 |
1995.07.31 |
申请人 |
STMICROELECTRONICS S.R.L.;CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO |
发明人 |
PALARA, SERGIO;GRAZIANO, VITO |
分类号 |
H03K17/0412;H03K17/30;H05B41/282;(IPC1-7):H05B41/00;H03K17/687;H02M7/538;H05B41/29 |
主分类号 |
H03K17/0412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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