发明名称 |
Interconnection structure of semiconductor device |
摘要 |
An interconnection structure of a semiconductor device with a gate electrode, an active region provided in the vicinity of the gate electrode and a first buried layer in a contact hole exposing the gate electrode and the active region. The contact hole is easily formed, and the first buried layer has a substantially low interconnection resistance value.
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申请公布号 |
US5600170(A) |
申请公布日期 |
1997.02.04 |
申请号 |
US19950479735 |
申请日期 |
1995.06.07 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SUGIYAMA, MASAO;AMISHIRO, HIROYUKI;HIGASHITANI, KEIICHI |
分类号 |
H01L23/522;H01L21/768;H01L23/485;H01L29/417;H01L29/45;H01L29/49;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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