发明名称 |
Thin film transistor with particular nitrogen concentration |
摘要 |
According to a method of manufacturing a thin film transistor (TFT), amorphous silicon is formed by ion-implanting either silicon or nitrogen into a region of polysilicon while a region located at the sidewall of a gate electrode is selectively left using the stepped portion of the gate electrode. Then, a heat treatment is applied to convert the amorphous silicon into polysilicon with the remaining polysilicon as a seed crystal. As a result, polysilicon having crystal grains of great grain size can be formed in uniform. Thus, the electric characteristics of a TFT can be improved with no difference in the electric characteristics between each TFT.
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申请公布号 |
US5600154(A) |
申请公布日期 |
1997.02.04 |
申请号 |
US19950546514 |
申请日期 |
1995.10.20 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SHIMIZU, SATOSHI;UENO, SHUICHI;MAEDA, SHIGENOBU;IPPOSHI, TAKASHI |
分类号 |
H01L21/20;H01L21/265;H01L21/336;H01L27/11;H01L29/78;H01L29/786;(IPC1-7):H01L29/76;H01L29/12;H01L27/108 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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