| 摘要 |
PROBLEM TO BE SOLVED: To provide the formation method, of a resist film, which can remove the resist droop produced, on the edge of a resist film, which seriously affects an irregularity in the size of a lead frame product for an IC and which is generated after a developing operation. SOLUTION: A formation method includes a first process in which a pretreated lead frame base plate for an IC is coated with a photocuring resist film so as to be treated, of a second process in which a prescribed pattern is exposed to the resist film, of a third process in which the exposed resist film is developed, of a fourth process in which the resist film is immersed in sulfuric acid, of a fifth process in which the resist film is treated so as to be hardened and of a sixth process in which the resist film is baked. |
