| 摘要 |
Disclosed is a semiconductor etching method comprising exposing the wafer surface, in a plasma etching apparatus, to a radio-frequency plasma comprising a mixture of a noble gas and a saturated or unsaturated reduced carbon compound selected from the group consisting of acetylene (C2H2), benzene (C6H6), graphite or buckminsterfullerene (C60) and a halogen compound selected from the group consisting of fluorine, chlorine, bromine, hydrogen chloride, hydrogen fluoride, hydrogen bromide, sulphur hexafluoride and nitrogen trifluoride.
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