发明名称 |
Method for manufacturing a semiconductor wiring structure including a self-aligned contact hole |
摘要 |
In a highly integrated semiconductor wiring structure having a plurality of wiring layers and a self-aligned contact hole formed therebetween, the wiring layer is formed such that a portion where a contact hole will be formed is formed to a first wiring width and a remaining portion is formed to a second wiring width being wider than the first wiring width. In the method for manufacturing such a structure, the contact hole is formed in self-alignment fashion, and thus, a short which may occur due to misalignment can be prevented.
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申请公布号 |
US5597763(A) |
申请公布日期 |
1997.01.28 |
申请号 |
US19950427855 |
申请日期 |
1995.04.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SIM, SANG-PIL |
分类号 |
H01L21/3205;H01L21/768;H01L21/8234;H01L21/8242;H01L23/52;H01L23/528;H01L27/088;H01L27/10;H01L27/108;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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