发明名称 Method of forming a single crystal material
摘要 A method of growing an epitaxial like, single crystal, superconducting film by promoting the epitaxial-like growth of film from a single nucleation site in deference to substantially all other nucleation sites on the substrate. The present invention contemplates the use of a mask to systematically expose sections of the substrate to the deposition apparatus. This mask may include an adjustable or fixed aperture and is manipulated as herein described to systematically expose areas of the substrate to the deposition apparatus.
申请公布号 US5597411(A) 申请公布日期 1997.01.28
申请号 US19910656697 申请日期 1991.02.19
申请人 ENERGY CONVERSION DEVICES, INC. 发明人 FRITZSCHE, HELMUT;OVSHINSKY, STANFORD R.;YOUNG, ROSA
分类号 C30B23/04;C30B23/08;C30B25/02;C30B25/04;C30B25/18;C30B29/22;H01L21/203;H01L39/24;(IPC1-7):C30B25/04 主分类号 C30B23/04
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