发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF MAKING SAME |
摘要 |
A composite structure (16) having a silicon carbide epitaxial layer is provided. The epitaxial layer includes at least four regions arranged vertically and defining respective interfaces, where each of the regions is characterized by a respective impurity concentration, where the impurity concentrations vary across each o f the interfaces, and where each of the impurity concentrations exceeds 1.times.10 17 cm-3 for at least one single impurity in all of the regions.
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申请公布号 |
CA2551209(A1) |
申请公布日期 |
2006.12.27 |
申请号 |
CA20062551209 |
申请日期 |
2006.06.22 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
ELASSER, AHMED;ROWLAND, LARRY BURTON |
分类号 |
H01L29/36;H01L21/20;H01L29/12 |
主分类号 |
H01L29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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