Method of manufacturing a semiconductor device including bipolar and MOS transistors

摘要

An npn bipolar transistor and a p-channel MOS transistor are formed on a p-type silicon substrate. The outer base electrode of the npn bipolar transistor and the gate electrode of the p-channel MOS transistor contain a p-type impurity and are composed of films consisting of the same material. The inner and outer bases are formed in a surface region of the p-type silicon substrate. The outer base is connected to the outer base electrode. The emitter electrode of the npn bipolar transistor is formed on the inner base. A laminated film constituted by a silicon oxide film and a silicon nitride film is formed on a p-type silicon substrate at a position between the outer base electrode and the emitter electrode.