发明名称 LOW DAMAGE SOURCE AND DRAIN DOPING TECHNIQUE
摘要 A process for fabricating a source and drain region which includes a more lightly doped source and drain tip region (40) immediately adjacent to the gate (11) and a more heavily doped main portion (41) of the source and drain region spaced apart from the gate. A first layer (16) of glass (2 % BSG) is used to provide the source of doping for the tip region and a second layer (35) of glass (6 % BSG) is used to provide the dopant for the more heavily doped major portion of source and drain regions. Spacers (30, 31) are formed between the glass layers to define the tip region from the main portion of the source and drain regions.
申请公布号 WO9702594(A1) 申请公布日期 1997.01.23
申请号 WO1996US11184 申请日期 1996.07.01
申请人 INTEL CORPORATION;THOMPSON, SCOTT;BOHR, MARK, T.;PACKAN, PAUL, A. 发明人 THOMPSON, SCOTT;BOHR, MARK, T.;PACKAN, PAUL, A.
分类号 H01L21/225;H01L21/265;H01L21/336;H01L21/8238;H01L27/092;(IPC1-7):H01L21/385;H01L21/823 主分类号 H01L21/225
代理机构 代理人
主权项
地址