A process for fabricating a source and drain region which includes a more lightly doped source and drain tip region (40) immediately adjacent to the gate (11) and a more heavily doped main portion (41) of the source and drain region spaced apart from the gate. A first layer (16) of glass (2 % BSG) is used to provide the source of doping for the tip region and a second layer (35) of glass (6 % BSG) is used to provide the dopant for the more heavily doped major portion of source and drain regions. Spacers (30, 31) are formed between the glass layers to define the tip region from the main portion of the source and drain regions.
申请公布号
WO9702594(A1)
申请公布日期
1997.01.23
申请号
WO1996US11184
申请日期
1996.07.01
申请人
INTEL CORPORATION;THOMPSON, SCOTT;BOHR, MARK, T.;PACKAN, PAUL, A.