摘要 |
<p>1,091,869. Photoconductive devices; C.R.T. targets. MATSUSHITA ELECTRONICS CORPORATION. Dec. 2, 1964 [Dec. 14, 1963], No. 49062/64. Headings H1D and H1K. A photoconductive target for a camera tube comprises a layer of lead monoxide on a conductive substratum, covered by a chalcogen film comprising sulphur, selenium or tellurium with an upper layer of evaporated silver. In one embodiment a 20Á layer 3 of lead monoxide is deposited on a glass substrate 2. bearing a conductive coating 1 and a quantity of silver sulphide is heated above its decomposition temperature (950‹ C.) so that a sulphur film 4 containing some silver and then a silver film 5 containing some sulphur are deposited on the lead monoxide film. The film 4 could consist alternatively of selenium or tellurium or of mixtures of these substances. The silver film is thin with high electrical resistance between the particles.</p> |