发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A select MOS transistor and a data storage MOS transistor are formed in an element region. The transistor has floating-gate electrodes. The floating-gate electrodes are spaced apart above the element region and connected to each other above a field region. Only a tunnel insulating film much thinner than a gate insulating film of the transistor is placed between the floating-gate electrode and a drain region. Only the gate insulating film much thinner than the gate insulating film of the transistor is placed between the floating-gate electrode and the channel region of the transistor. In the element region, the shape of a control electrode is the same as that of the floating-gate electrodes.
|
申请公布号 |
US5596529(A) |
申请公布日期 |
1997.01.21 |
申请号 |
US19940351185 |
申请日期 |
1994.11.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NODA, JUNICHIRO;TOHYAMA, DAISUKE |
分类号 |
H01L21/8247;H01L27/105;H01L27/115;H01L29/423;H01L29/788;(IPC1-7):G11C11/34 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|