SEMICONDUCTOR MASK DEVICE, MANUFACTURE THEREOF AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To make it possible to realize the complete flattening of an interlayer film corresponding to the microminiaturization of an element by the existing facility. SOLUTION: The semiconductor mask device comprises a first semiconductor mask 1 for forming wirings 4 on a semiconductor substrate 3, and a second semiconductor mask 2 for forming a resist pattern 6 formed on an insulating film 5. The mask 1 has mask regions 1A, 1B, 1C, and the mask 2 has mask regions 2A, 2B. The mask region intervals (d) of the intervals between the regions 1A, 1B, 1C of the mask 1 and the regions 2A, 2B of the mask 2 to be formed when the mask 1 is superposed on the mask 2 are all equal.