发明名称 |
CUTTING OF GARNET SINGLE CRYSTAL FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for cutting a garnet single crystal film, capable of reducing the failure of the cutting due to chipping by forming a notch having specific length and depth on the film of bismuth-replaced rare earth element-iron garnet single crystal and subsequently perfectly cutting the film. SOLUTION: A notch having a length of >=30μm and a depth which is maximally 40% of the thickness of a bismuth-replaced rare earth element-iron single crystal (BIG) film is once formed with a dicing machine at the cutting position of the BIG film raised by a liquid phase epitaxial method and having a thickness of >=200μm. An adhesive tape whose adhesive force is largely eliminated by a means such as heating, light irradiation or electron bean irradiation is adhered to the film, and the notched film is perfectly cut into pieces having each a 3mm×3mm size or smaller with the dicing machine. The adhesive tape is subsequently removed. The moving speed of the blade is 0.3-2mm/sec in the notching and cutting processes.
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申请公布号 |
JPH0920598(A) |
申请公布日期 |
1997.01.21 |
申请号 |
JP19950169803 |
申请日期 |
1995.07.05 |
申请人 |
MITSUBISHI GAS CHEM CO INC |
发明人 |
TAKANO TOSHIHIKO;TAKEDA NORIO |
分类号 |
G02F1/09;C30B29/28;C30B33/00;(IPC1-7):C30B29/28 |
主分类号 |
G02F1/09 |
代理机构 |
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地址 |
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