发明名称 |
Back end IC wiring with improved electro-migration resistance |
摘要 |
A multi-level semiconductor device wiring interconnect structure and method of forming the same to improve electrical properties and reliability of wiring interconnects including an electromigration resistance and electrical resistance, the method including forming a dielectric insulating layer over a conductive portion; forming a via opening in closed communication with the conductive portion; forming a first barrier layer to line the via opening; forming a layer of AlCu according to a sputtering process to fill the via opening to form an AlCu via including a portion overlying the first dielectric insulating layer; and, photolithographically patterning and dry etching the portion to form an AlCu interconnect line over the AlCu via.
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申请公布号 |
US2005221554(A1) |
申请公布日期 |
2005.10.06 |
申请号 |
US20040813784 |
申请日期 |
2004.03.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HUANG CHIEN-CHAO |
分类号 |
H01L21/3205;H01L21/44;H01L21/4763;H01L21/768;H01L21/8238;H01L23/532;(IPC1-7):H01L21/823;H01L21/320;H01L21/476 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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