发明名称 |
Process for thickening selective gate oxide regions |
摘要 |
One embodiment of the present invention is a method of simultaneously forming high-voltage (12) and low-voltage (10) devices on a single substrate (14), the method comprising: forming a thin oxide layer (18) on the substrate, the thin oxide layer having a desired thickness for a gate oxide for the low-voltage device; selectively forming a gate structure (30) for the high-voltage device, the thin oxide is situated between the gate structure and the substrate; and selectively thickening the thin oxide under the gate structure while keeping the thin oxide layer utilized for the low-voltage device at the desired thickness.
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申请公布号 |
US5595922(A) |
申请公布日期 |
1997.01.21 |
申请号 |
US19940330655 |
申请日期 |
1994.10.28 |
申请人 |
TEXAS INSTRUMENTS |
发明人 |
TIGELAAR, HOWARD L.;RIEMENSCHNEIDER, BERT R.;CHAPMAN, RICHARD A.;APPEL, ANDREW T. |
分类号 |
H01L21/8247;H01L21/28;H01L21/8238;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/265;H01L21/70;H01L27/00 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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