SOURCE LASER A SEMICONDUCTEURS

摘要

A semiconductor laser source comprising a stack of semiconductor laser diodes each having at least one active region (I1) consisting of a series of semiconductor layers between an ohmic contact layer (c1) and a substrate (S) that is also used as an ohmic contact layer. Pressure means maintain the mutual contact between the ohmic contact layers of the diodes. The size and particularly the thickness of each diode is such that the transient heating in each diode is minimised, and enables a predetermined value for the average heating of the diode stack to be achieved.