| 摘要 |
PURPOSE: To obtain a plasma etching system by which an organic material can be analyzed in the depth direction and existing molecules and functional groups can be selected without damaging the material. CONSTITUTION: A radical etching region has a tubular outer electrode 1 to be applied with a high frequency power supply and a tubular inner electrode 3 connected with the earth arranged coaxially through a tubular insulator 2. An ion etching region has a barrel tube outer electrode, comprising a tubular electrode 1 to be applied with a high frequency power supply and an earth electrode 4, and an ungrounded tubular inner electrode arranged coaxially through a tubular insulator 2. The radical etching mode region and the ion etching region are constituted continuously in the axial direction while integrating the electrode to be applied with high frequency power supply and a gas to be used is introduced selectively from a gas introduction block. This structure enables to perform reactive ion etching utilizing plasma reaction and etching using radical groups. |
