Halbleitervorrichtung

摘要

A dynamic random access memory includes an improved redundant use detection circuit, a redundant fuse circuit for programming a defective row, and a redundant enable circuit for enabling the redundant fuse circuit. Redundant use detection circuit includes a switching element responsive to a redundant use signal from the redundant enable circuit for conducting. High voltage is applied through an external terminal in a redundant use detection mode, and use of a redundant circuit is detected by the presence of current flowing into the redundant use detection circuit. Since a fuse element is not necessary in the redundant use detection circuit, integration density is further improved, thus permitting easy detection of use of a redundant circuit as well.