发明名称 Etching recipe for the CrSi film
摘要 An etchant recipe suitable for the photo-etching process of the CrSi metalized film in the patterning of electronic circuitry. The etchant comprises 100 to 120 parts of 36.5 to 38% HCl, 1.0 to 2.0 parts of 48.8 to 49.2% HF, 0 to 10 parts of 30.0 to 32.0% H2O2 and 50 to 100 parts of 85 to 87% H3PO4. A 0.1 g/100 cc wetting agent is optionally added.
申请公布号 US5593601(A) 申请公布日期 1997.01.14
申请号 US19950456918 申请日期 1995.06.01
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 HSIEH, HSIEN-FEN;HSU, MING-TEH
分类号 H01L21/02;(IPC1-7):B44C1/22;C23C1/00 主分类号 H01L21/02
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