发明名称 |
Etching recipe for the CrSi film |
摘要 |
An etchant recipe suitable for the photo-etching process of the CrSi metalized film in the patterning of electronic circuitry. The etchant comprises 100 to 120 parts of 36.5 to 38% HCl, 1.0 to 2.0 parts of 48.8 to 49.2% HF, 0 to 10 parts of 30.0 to 32.0% H2O2 and 50 to 100 parts of 85 to 87% H3PO4. A 0.1 g/100 cc wetting agent is optionally added.
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申请公布号 |
US5593601(A) |
申请公布日期 |
1997.01.14 |
申请号 |
US19950456918 |
申请日期 |
1995.06.01 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
HSIEH, HSIEN-FEN;HSU, MING-TEH |
分类号 |
H01L21/02;(IPC1-7):B44C1/22;C23C1/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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