Sense amplifier control circuit of semiconductor memory device

摘要

The present invention relates to a semiconductor memory device having a sense amplifier operated by a given control signal and a sense amplifier driver. A comparator compares the amplified sense amplifier driver with a reference voltage. A comparison output signal is enabled and used by a bias circuit and a sense amplifier driver control circuit, which circuit has an output line connected to a control terminal of the sense amplifier driver. The output line signal variably controls current flowing into the sense amplifier driver by allowing the amount of current to be increased when transmitting data from a RAM port to a SAM port. A bias circuit maintains the current flowing into the driving element at a constant state regardless of an increment or decrement of an external power supply voltage.