| 摘要 |
<p>PURPOSE: To provide an MIM/MIS electron source which can emit a uniform and stable electron in a prescribed plane and whose manufacturing process is easy, and its manufacturing method. CONSTITUTION: Helium and oxygen are introduced into a first chamber of 500Torr, and aluminium is evaporated, and an ultrafine particle Al whose surface is covered with an oxide film (Al2 O3 ) and which has a diameter of about 20nm is generated. This ultrafine particle is introduced into a second chamber, and is blown off from a nozzle, and is blown against an upper surface of a lower electrode layer 5, and a particulate layer 6 is formed. A gold thin film 7 having a thickness of about 10nm is formed on a surface of this particulate layer 6. When voltage V1 is impressed between points P and Q, a tunnel current flows in MIM junction such as Al→Al2 O3→Au, and an electron is emitted toward a counter electrode 8 from an upper surface of the thin film 7.</p> |
