| 摘要 |
PURPOSE: To obtain a nonvolatile memory using a ferroelectric body capable of operating stably with a low voltage, by setting a precharge potential of a data line to be higher than a supply voltage or lower than an earth voltage. CONSTITUTION: A memory cell is constituted of at least one ferroelecric capacitor and one switching transistor. In order to prevent the polarization of the ferroelectric capacitor from being reversed unexpectedly at the standby time, a means for holding nodes SN1, SN1B, etc., in the vicinity of Vcc/2, for example, a high resistor for connecting one end to the SN1 and the other end at the Vcc/2 potential or the like is provided. If a source potential of an n-channel transistor is changed from Vhp to Vss at high speeds when a sense circuit operates, one of complementary data lines after amplified becomes Vss, while the other of the lines becomes higher than Vss and lower than Vhp. In this constitution of the obtained nonvolatile memory, a constant high potential is fed to the data lines, and a potential for rewriting data is surely impressed to the ferroelectric capacitor. |
