| 摘要 |
<p>PURPOSE: To obviate the disconnection of a transparent conductive film formed over the entire surface of a substrate and to improve a yield by etching the transparent conductive film to form pixel electrodes and forming an insulator layer by a sputtering method, etc. CONSTITUTION: Indium tin oxide is formed as the transparent conductive film 21 over the entire surface on the glass substrate 11 and thereafter, the transparent conductive film 21 is patterned by a wet process etching method with a photoresist 22 as a mask, by which the pixel electrodes 12 are formed. Tantalum pentaoxide is thereafter formed over the entire surface by sputtering method as the insulator material 23 and this insulator material 23 is patterned with a photoresist 24 as a mask, by which insulator layers 13 are formed. A row electrode material 25 for thin-film diodes is thereafter formed over the entire surface and is subjected to dry process etching with a photoresist 26 as a mask, by which row electrodes 14 are formed. A protective film layer 27 formed over the entire surface is etched with a photoresist 28 as a mask, by which a protective layer 15 is formed.</p> |
